 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| WTD40N03 Surface Mount P-Channel Enhancement Mode POWER MOSFET 3 DRAIN P b Lead(Pb)-Free 1 GATE 2 DRAIN CURRENT -15 AMPERES DRAIN SOURCE VOLTAGE -60 VOLTAGE Features: R DS(ON) <90m @V GS =-10V *Simple Drive Requirement *Lower On-resistance *Fast Switching Characteristic *TO-252 Package *Super High Dense Cell Design For Low RDS(ON) SOURCE 4 1 1. GATE 2.4 DRAIN 3. SOURCE 2 3 D-PAK / (TO-252) Maximum Ratings(Ta=25 C Unless Otherwise Specified) Rating Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, (VGS@10V, TC=25C) , (VGS@10V, TC=100C) Pulsed Drain Current 1 Symbol VDS VGS ID IDM PD RJC RJA TJ,Tstg Value 30 20 -20 -13 150 50 2.5 110 - 55~+150 Unit V A Total Power Dissipation(TC=25C) Thermal Resistance Junction-case Thermal Resistance Junction-ambient Operating Junction and Storage Temperature Range W C/W C/W C http:www.weitron.com.tw WEITRON 1/6 12-Jul-07 WTD40N03 Electrical Characteristics (TA = 25 Characteristic Unless otherwise noted) Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage ID=250A,VGS=0 Gate-Source Threshold Voltage ID=250A,VDS=VGS Gate-Source Leakage current VGS=20V Drain-SourceLeakage Current(Tj=25C) VDS=30V,VGS=0 Drain-SourceLeakage Current(Tj=150C) VDS=24V,VGS=0 Static Drain-Source On-Resistance ID=18A,VGS=10V ID=14A,VGS=4.5V Forward Transconductance ID=18A,VDS=10V BVDSS VGS(Th) IGSS 30 1.0 IDSS 250 V 3.0 100 25 A nA RDS(on) - 18 24 26 21 30 - m gfs S Dynamic Input Capacitance VGS=0V,VDS=25V,f=1.0MHz Output Capacitance VGS=0V,VDS=25V,f=1.0MHz Reverse Transfer Capacitance VGS=0V,VDS=25V,f=1.0MHz Ciss Coss Crss 800 380 133 pF http:www.weitron.com.tw WEITRON 2/6 12-Jul-07 WTD40N03 Switching Turn-on Delay Time2 ID=18A,VDS=15A,VGS=10V,RG=3.3,RD=0.83 Rise Time ID=18A,VDS=15A,VGS=10V,RG=3.3,RD=0.83 Turn-off Delay Time ID=18A,VDS=15A,VGS=10V,RG=3.3,RD=0.83 Fall Time ID=18A,VDS=15A,VGS=10V,RG=3.3,RD=0.83 Total Gate CHarge2 ID=18A,VDS=24V,VGS=5V Gate-Source Charge ID=18A,VDS=24V,VGS=5V Gate-Drain ("Miller") Change ID=18A,VDS=24V,VGS=5V Td(on) Tr Td(off) Tf 7.2 60 22.5 10 ns - Qg Qgs Qgd - 17 3 10 nC Source-Drain Diode Characteristics Forward On Voltage2 IS=36A, VGS=0V,Tj=25C Continuous Source Current (Body Diode) VD=VG=0V,VS=1.3V Pulsed Source Durrent (Body Diode)1 VSD IS ISM 1.3 36 150 V A A Note: 1. Pulse width limited by safe operating area. 2. Pulse width 300s, duty cycle 2%. http:www.weitron.com.tw WEITRON 3/6 12-Jul-07 WTD40N03 Characteristics Curve 100 Tc=25C 80 ID , Drain Current (A) VG=10V VG=7.0V VG=6.0V ID , Drain Current (A) 80 Tc=150C VG=10V VG=7.0V VG=6.0V 60 60 VG=5.0V VG=5.0V 40 VG=4.0V 20 VG=3.0V 40 VG=4.0V 20 VG=3.0V 1 2 3 4 5 VDS . Drain-to-Source Voltage(V) 6 7 0 0 1 0 0 2 3 4 5 VDS . Drain-to-Source Voltage(V) 6 7 FIG.1 Typical Output Characteristics 31 29 R DSON (m) 27 25 23 21 19 17 0 4 5 6 7 8 VGS (V) 9 10 11 12 ID=18A TC=25C Fig.2 Typical Output Characteristics 1.80 1.60 Normalized R DS(ON) 1.40 1.20 1.00 0.80 0.60 -50 ID=18A VG=10V Fig.3 On-Resistance v.s. Gate Voltage 40 35 ID,Dream Current(A) 30 PD (W) 25 20 15 10 5 0 25 50 75 100 150 150 10 0 40 30 20 60 50 Fig.4 Normalized OnResistance 0 Tj 50 100 150 Tj 25 50 Tj 75 100 150 150 Fig.5 Maximum Drain Current v.s. Case Temperature Fig.6 Type Power Dieeipation WEITRON http://www.weitron.com.tw 4/6 12-Jul-07 WTD40N03 100 10 100 Normalized Thermal Response(Rthjc) 1 DUTY=0.5 0.2 ID(A) 10us 100us 10 1ms 10ms 0.1 0.1 0.05 0.02 0.01 SINGLE PULSE PDM t T D=0.01 Ta 1 1 10 100ms 100 Duty factor = t / T Peak Tj=PDM x Rthjc + TC VDS(V) 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 t , Pulse Width (s) Fig 7. Maximum Safe Operating Area 16 Fig 8. Effective Transient Thermal Impedance 10000 f=1.0MHz VGS,Gate to Source Voltage (V) 14 12 10 8 6 4 2 1 Id=20A VD=16V VD=20V VD=24V C(pF) 1000 Ciss Coss Crss 0 5 QG , Total Gate Charge (nC) 10 15 20 25 30 35 40 100 1 5 9 13 VDS (V) 17 21 25 29 Fig 9. Gate Charge Characteristics 100 Fig 10. Typical Capacitance Characteristics 3 10 Tj 1 VGS(th) (V) Tj 2 IS (A) 1 0.1 0.01 0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 0 -50 Fig 11. Forward Charateristics of Reverse Diode VSD (V) Tj 0 50 100 150 Fig.12 Gate Threshold Voltage v.s. Junction Temperature WEITRON http://www.weitron.com.tw 5/6 12-Jul-07 WTD40N03 D-PAK / (TO-252) Outline Dimension Unit:mm E A 4 D-PAK G H J 1 2 3 B M D C L K Dim A B C D E G H J K L M Min 6.40 9.00 0.50 2.20 0.45 1.00 5.40 0.30 0.70 0.90 6.80 10.00 0.80 2.30 2.50 0.55 1.60 5.80 0.64 1.70 1.50 Max WEITRON http://www.weitron.com.tw 6/6 12-Jul-07 |
Price & Availability of WTD40N03
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |